Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks-Reference-Cited by-同舟云学术

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Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Published:2015-03-25 Issue:15 Volume:48 Page:152001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Puybaret Renaud,Hankinson John,Palmer James,Bouvier Clément,Ougazzaden Abdallah,Voss Paul L,Berger Claire,de Heer Walt A

Funder

French Embassy - Partner University Fund

W.M. Keck Foundation

National Science Foundation

European Graphene Flagship Program

Air Force Office of Scientific Research

French Lorraine Region

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=15/a=152001/pdf

Reference32 articles.

1. Exceptional ballistic transport in epitaxial graphene nanoribbons

2. A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene

3. Towards a quantum resistance standard based on epitaxial graphene

4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

5. Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

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1. Production and processing of graphene and related materials;2D Materials;2020-01-29

2. Fabrication of SiC MEMS Sensors;Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors;2018

3. Structure and band structure of epitaxial graphene on hexagonal silicon carbide;Physics of Solid Surfaces;2018

4. Chapter 6: Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons;Growing Graphene on Semiconductors;2017-09-08

5. Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase;Nano Letters;2016-12-21

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