Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase-Reference-Cited by-同舟云学术

Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase

Published:2016-12-21 Issue:1 Volume:17 Page:341-347
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Conrad Matthew¹^ORCID,Wang Feng¹,Nevius Meredith¹,Jinkins Katherine²,Celis Arlensiú³,Narayanan Nair Maya⁴,Taleb-Ibrahimi Amina⁵,Tejeda Antonio³,Garreau Yves⁴,Vlad Alina⁴,Coati Alessandro⁴,Miceli Paul F.⁶,Conrad Edward H.¹

Affiliation:

1. The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, United States

2. University of Wisconsin-Platteville, Platteville, Wisconsin 53818, United States

3. Laboratoire de Physique des Solides, Universit Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France

4. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette France

5. UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette France

6. Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211, United States

Funder

Division of Graduate Education

Division of Materials Research

Partner University Fund, Embassy of France in United States of America

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04196

Reference48 articles.

1. Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy

2. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

3. LEED and Auger electron observations of the SiC(0001) surface

4. Heteroepitaxial graphite on6H−SiC(0001): Interface formation through conduction-band electronic structure

5. Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate

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