Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN-Reference-Cited by-同舟云学术

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Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Published:2010-08-24 Issue:36 Volume:43 Page:365102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Sakalauskas E,Behmenburg H,Hums C,Schley P,Rossbach G,Giesen C,Heuken M,Kalisch H,Jansen R H,Bläsing J,Dadgar A,Krost A,Goldhahn R

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference59 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. High-current AlInN/GaN field effect transistors

3. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

4. High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

5. The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

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