High-current AlInN/GaN field effect transistors-Reference-Cited by-同舟云学术

High-current AlInN/GaN field effect transistors

Published:2005-04 Issue:5 Volume:202 Page:832-836
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Dadgar A.,Neuburger M.,Schulze F.,Bläsing J.,Krtschil A.,Daumiller I.,Kunze M.,Günther K.-M.,Witte H.,Diez A.,Kohn E.,Krost A.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

3. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

4. Power electronics on InAlN/(In)GaN: Prospect for a record performance

5. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

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