The distribution of negative resistivity in the active layer of millimetre-wave double-drift region diodes
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/22/i=7/a=013/pdf
Reference10 articles.
1. Computer analysis of DC field and current-density profiles of DAR impatt diode
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3. Effect of carrier diffusion on the small-signal behavior of IMPATT diodes
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1. Large signal and noise properties of heterojunction AlxGa1−xAs/GaAs DDR IMPATTs;Journal of Semiconductors;2016-06
2. Transit Time Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
3. Avalanche Noise Generation Profile along Active Zone of Impatt Diodes;IETE Technical Review;1999-03
4. Computer-aided studies on the wide-band microwave characteristics of a silicon double avalanche region (DAR) diode;Semiconductor Science and Technology;1995-06-01
5. Effect of the diffusion impurity profile on the microwave properties of silicon p+nn+IMPATT diodes;Semiconductor Science and Technology;1994-03-01
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