Computer-aided studies on the wide-band microwave characteristics of a silicon double avalanche region (DAR) diode
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. A Proposed High-Frequency, Negative-Resistance Diode
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5. A small signal analysis of an impatt device having two avalanche layers interspaced by a drift layer
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1. A comparative study of high frequency characteristics of SiC-based SDRs;16th International Workshop on Physics of Semiconductor Devices;2012-10-15
2. GaN based transfer electron and avalanche transit time devices;Journal of Semiconductors;2012-05
3. Comparative study on the high-bandgap material (GaN and SiC)-based impact avalanche transit time device;IET Microwaves, Antennas & Propagation;2008-12-01
4. Internal structure optimization of a DAR IMPATT diode for high frequency band;2008 26th International Conference on Microelectronics;2008-05
5. Nonlinear Analysis and Structure Optimization of a DAR IMPATT Diode;18th International Conference on Electronics, Communications and Computers (conielecomp 2008);2008-03
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