Influence of oxygen pressure on the structural and dielectric properties of laser-ablated Ba0.5Sr0.5TiO3thin films epitaxially grown on (001) MgO for microwave phase shifters-Reference-Cited by-同舟云学术

Influence of oxygen pressure on the structural and dielectric properties of laser-ablated Ba0.5Sr0.5TiO3thin films epitaxially grown on (001) MgO for microwave phase shifters

Published:2006-05-05 Issue:10 Volume:39 Page:2282-2288
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhu X H,Meng Q D,Yong L P,He Y S,Cheng B L,Zheng D N

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/39/i=10/a=043/pdf

Reference28 articles.

1. Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters

2. Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

3. A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO3 thin films

4. Low dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods

5. Microstructure and dielectric properties of Ba1−xSrxTiO3 films grown on LaAlO3 substrates

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1. Influence of oxygen pressure during deposition on the microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films in PLD process;Applied Surface Science;2024-10

2. Composition-spread epitaxial ferroelectric thin films for temperature-insensitive functional devices;Acta Physica Sinica;2023

3. Combined In Situ XRD and Ex Situ TEM Studies of Thin Ba 0.5 Sr 0.5 TiO 3 Films Grown by PLD on MgO;Crystal Research and Technology;2020-07-20

4. Real time in situ x-ray diffraction study of the crystalline structure modification of Ba0.5Sr0.5TiO3 during the post-annealing;Scientific Reports;2018-08-10

5. Investigation of interface and oxygen vacancy of Pt/Ba0.6Sr0.4TiO3/MgO interdigital capacitor through sequent low and high temperature annealings;Modern Physics Letters B;2017-04-20