Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques-Reference-Cited by-同舟云学术

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Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques

Published:2013-05-03 Issue:20 Volume:46 Page:205103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Su X J,Xu K,Xu Y,Ren G Q,Zhang J C,Wang J F,Yang H

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=20/a=205103/pdf

Reference31 articles.

1. Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

2. Recent achievements in AMMONO-bulk method

3. Growth of bulk GaN crystals by Na flux method

4. GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

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1. Laser lift-off technique for applications in III-N microelectronics: A review;Microelectronic Engineering;2024-07

2. Comparative Analysis of Optoelectrical Performance in Laser Lift-Off Process for GaN-Based Green Micro-LED Arrays;Nanomaterials;2023-07-30

3. Laser Lift‐Off Technologies for Ultra‐Thin Emerging Electronics: Mechanisms, Applications, and Progress;Advanced Materials Technologies;2022-11-13

4. Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes;Journal of Applied Physics;2022-08-14

5. A Novel Strategy Achieving GaN Ultra-Smooth Surface via a Square, Flat Top Beam Shaped Femtosecond Laser Processing Combined with Chemical Mechanical Polishing;ECS Journal of Solid State Science and Technology;2022-05-01

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