Ag and zinc oxide-doped indium oxide ohmic contacts to p-type GaN for flip-chip LED applications
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/40/i=21/a=007/pdf
Reference20 articles.
1. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. High reliability GaN-based light-emitting diodes with photo-enhanced wet etching
4. Improved performance of InGaN/GaN blue light-emitting diodes with a SiO2/TiO2 Bragg reflector
5. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
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1. Optimization of annealing conditions for Ag/p–GaN ohmic contacts;Applied Physics A;2021-10-25
2. Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays;Applied Surface Science;2020-05
3. Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs;Japanese Journal of Applied Physics;2018-02-05
4. Improvement of thermal stability of Ag-based reflector in GaN-based flip chip LEDs by electron-beam irradiation;physica status solidi (a);2017-02-17
5. Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application;Journal of Electronic Packaging;2016-03-01
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