Correlations between 1/f noise and DC characteristics in bipolar transistors
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/18/i=11/a=016/pdf
Reference9 articles.
1. A theoretical and experimental study of recombination in silicon p−n junctions
2. On the theory of logorithmic silicon diodes
3. Current-voltage relation in silicon p-n junctions
4. 1/f noise in bipolar transistors
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1. Electrical noise as a reliability indicator in electronic devices and components;IEE Proceedings - Circuits, Devices and Systems;2002-02-01
2. Static and low-frequency noise characteristics of n+p junction diodes fabricated in different silicon substrates;Semiconductor Science and Technology;1995-07-01
3. Low-frequency excess noise in large GaAs heterostructures-temperature and frequency dependence;Semiconductor Science and Technology;1988-12-01
4. The non-ideal current in bipolar transistors;Solid-State Electronics;1987-09
5. The characteristics of emitter-collector surface leakage channels in bipolar transistors;Microelectronics Reliability;1987-01
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