The non-ideal current in bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. A theoretical and experimental study of recombination in silicon p−n junctions
2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
3. R.B. Lefferts. PhD Thesis, Stanford University, U.S.A. (1981)
4. On the theory of logorithmic silicon diodes
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Noise as a Measure of Quality and Reliability in Electronic Devices;Advances in Electronics and Electron Physics Volume 87;1993
2. Modeling hot-carrier effects in polysilicon emitter bipolar transistors;IEEE Transactions on Electron Devices;1988
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