Current-voltage relation in silicon p-n junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
2. Modified theory of the current/voltage relation in silicon p–n junctions
3. A theoretical and experimental study of recombination in silicon p−n junctions
4. Electron-Hole Recombination in Germanium
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Correlations between 1/f noise and DC characteristics in bipolar transistors;Journal of Physics D: Applied Physics;1985-11-14
2. 1/f noise in bipolar transistors;Journal of Physics D: Applied Physics;1985-01-14
3. Analysis of the space-charge model in semiconductors;Journal of Physics D: Applied Physics;1982-01-14
4. Comments on “current-voltage relation in silicon p-n junctions”;Solid-State Electronics;1979-01
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