Plasma and chemical oxides on (n)InP: optical and electrical characterisation-Reference-Cited by-同舟云学术

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Plasma and chemical oxides on (n)InP: optical and electrical characterisation

Published:1983-11-14 Issue:11 Volume:16 Page:2229-2237
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Michel C,Guillot J M,Lepley B,Dupont-Pavlovsky N,Karnicka-Moscicka K

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/16/i=11/a=025/pdf

Reference15 articles.

1. Oxide growth in an rf plasma

2. Generalized ellipsometric method for the determination of all the optical constants of the system: Optically absorbing film on an absorbing substrate

3. Oxidation of (n)-InP by nitric acid

4. A new ellipsometer its principle, realization and performances

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties and modification of native oxides of InP(100);Journal of Physics D: Applied Physics;2022-12-13

2. On the determination of interface state density in n-InP Schottky structures by current–voltage measurements;Solid-State Electronics;2000-03

3. Surface Modification by Cold Plasma;Film Deposition by Plasma Techniques;1992

4. Remote plasma-assisted oxidation of InP;Journal of Materials Science Letters;1991

5. Preparation of field-extracted plasma-grown oxide on InP;Journal of Materials Science Letters;1989-01

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