Wafer bonding solution to epitaxial graphene–silicon integration-Reference-Cited by-同舟云学术

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Wafer bonding solution to epitaxial graphene–silicon integration

Published:2014-02-12 Issue:9 Volume:47 Page:094001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Dong Rui,Guo Zelei,Palmer James,Hu Yike,Ruan Ming,Hankinson John,Kunc Jan,Bhattacharya Swapan K,Berger Claire,Heer Walt A de

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=9/a=094001/pdf

Reference36 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Graphene transistors

3. Observation of electron–hole puddles in graphene using a scanning single-electron transistor

4. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

5. Boron nitride substrates for high-quality graphene electronics

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1. Assessment of Wafer‐Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements;Advanced Materials Technologies;2023-01-29

2. An epitaxial graphene platform for zero-energy edge state nanoelectronics;Nature Communications;2022-12-19

3. Investigations on post sulphurised Cu2ZnSnS4 absorber layer thin films prepared using radio frequency magnetron sputtering;Thin Solid Films;2020-02

4. Production and processing of graphene and related materials;2D Materials;2020-01-29

5. Control of etch pit formation for epitaxial growth of graphene on germanium;Journal of Applied Physics;2019-08-28

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