Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/49/i=24/a=245204/pdf
Reference26 articles.
1. Plasma etching: Yesterday, today, and tomorrow
2. Electrochemical fabrication of nanocomposite films containing magnetic metal nanoparticles
3. Silicon etching in a pulsed HBr/O2 plasma. I. Ion flux and energy analysis
4. Silicon etching in a pulsed HBr/O2 plasma. II. Pattern transfer
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Oscillator Strengths and Cross Sections of the Valence-Shell Excitations of HBr Studied by Fast Electron Impact;The Journal of Physical Chemistry A;2023-09-18
2. Computational characterization of capacitive coupled HBr /Cl 2 / O 2 plasma;Contributions to Plasma Physics;2022-07-03
3. Study and optimize on the process of Floating gate with dry etching;Engineering Research Express;2021-08-09
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