Silicon etching in a pulsed HBr/O2 plasma. I. Ion flux and energy analysis-Reference-Cited by-同舟云学术

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Silicon etching in a pulsed HBr/O2 plasma. I. Ion flux and energy analysis

Published:2015-05 Issue:3 Volume:33 Page:032202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Haass Moritz,Darnon Maxime,Cunge Gilles,Joubert Olivier,Gahan David

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4917230

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion energy distribution measurement device using a capillary plate with high-aspect ratio;Physics of Plasmas;2023-12-01

2. Radical flux control in reactive ion beam etching (RIBE) by dual exhaust system;Applied Surface Science;2022-01

3. Study and optimize on the process of Floating gate with dry etching;Engineering Research Express;2021-08-09

4. Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas;Journal of Vacuum Science & Technology A;2021-07

5. Foundations of measurement of electrons, ions and species fluxes toward surfaces in low-temperature plasmas;Plasma Sources Science and Technology;2021-03-01

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