Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC-Reference-Cited by-同舟云学术

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Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC

Published:2005-05-06 Issue:10A Volume:38 Page:A93-A98
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Poust B,Heying B,Hayashi S,Ho R,Matney K,Sandhu R,Wojtowicz M,Goorsky M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/38/i=10A/a=018/pdf

Reference20 articles.

1. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

2. Mosaicity of GaN Epitaxial Layers: Simulation and Experiment

3. Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

4. Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe

5. Grazing Incidence In-plane Diffraction Measurement of In-plane Mosaic with Microfocus X-ray Tubes

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1. Controlled nano-roughening of the GaN surface by post-growth thermal annealing;Applied Surface Science;2024-05

2. Exfoliation of β-Ga2O3 Along a Non-Cleavage Plane Using Helium Ion Implantation;ECS Journal of Solid State Science and Technology;2019

3. Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers;Technical Physics Letters;2018-06

4. An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers;Electronic Materials Letters;2018-05-31

5. Structural characterization of Al 0.55 Ga 0.45 N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy;Chinese Physics B;2017-04

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