Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1571217
Reference21 articles.
1. Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3thin films by pulsed laser deposition
2. Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs
3. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
4. Growth of GaN on Si substrates – roles of BP thin layer
5. Delta-doped AlGaN∕AlN∕GaN microwave HFETs grown by metalorganic chemical vapour deposition
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