Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging-Reference-Cited by-同舟云学术

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Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging

Published:2005-05-06 Issue:10A Volume:38 Page:A50-A54
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Lübbert Daniel,Baumbach Tilo,Mikulík Petr,Pernot Petra,Helfen Lukas,Köhler Rolf,Katona Thomas M,Keller Stacia,DenBaars Steven P

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/38/i=10A/a=010/pdf

Reference14 articles.

1. Defect structure in selectively grown GaN films with low threading dislocation density

2. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

3. Laterally overgrown structures as substrates for lattice mismatched epitaxy

4. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

5. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

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1. X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si;Journal of Applied Crystallography;2021-06-14

2. РЕНТГЕНОВСКАЯ ДИФРАКЦИОННАЯ ТОПОГРАФИЯ (ОБЗОР);2020-05-22

3. Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers;physica status solidi (a);2019-11-12

4. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging;Journal of Synchrotron Radiation;2015-06-26

5. Epitaxial lateral overgrowth in the system Si/SiOx/Si: The influence of residual oxygen at the interface;Physical Review B;2011-03-21

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