Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces-Reference-Cited by-同舟云学术

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Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces

Published:2013-12-31 Issue:5 Volume:47 Page:055101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Marchiori C,El Kazzi M,Czornomaz L,Pierucci D,Silly M,Sirotti F,Abel S,Uccelli E,Sousa M,Fompeyrine J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=5/a=055101/pdf

Reference35 articles.

1. Thin film edge emitting lasers integrated onto silicon

2. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

3. The advanced unified defect model for Schottky barrier formation

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short-Range Mechanisms in the Creation of a ZnO/InGaAs Interface;Crystal Growth & Design;2022-07-05

2. Anomalous arsenic diffusion at InGaAs/InP interface;Materials Research Express;2018-12-19

3. Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs;Applied Surface Science;2018-05

4. Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks;Applied Physics Letters;2015-07-06

5. (Invited) Gate Stacks for Silicon, Silicon Germanium, and III-V Channel MOSFETs;ECS Transactions;2014-03-24

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