Effect of NH3and N2annealing on the interfacial and electrical characteristics of La2O3films grown on fully depleted SiGe-on-insulator substrates-Reference-Cited by-同舟云学术

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Effect of NH3and N2annealing on the interfacial and electrical characteristics of La2O3films grown on fully depleted SiGe-on-insulator substrates

Published:2008-12-12 Issue:1 Volume:42 Page:015306
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Gao L G,Yin K B,Xia Y D,Chen L,Guo H X,Shi L,Yin J,Liu Z G

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=1/a=015306/pdf

Reference23 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. The characteristic of HfO2 on strained SiGe

3. Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1−xGex

4. Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition

5. Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100);Journal of Materials Science & Technology;2014-04

2. Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory;Transactions on Electrical and Electronic Materials;2014-02-25

3. The effect of annealing atmosphere on the (HfO2)0.9(Al2O3)0.1 based charge trapping nonvolatile memory;Vacuum;2014-01

4. Epitaxial growth and electrical properties of ultrathin La2Hf2O7 high-k gate dielectric films;Applied Surface Science;2013-10

5. Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack;Journal of Rare Earths;2013-04

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