Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Reference23 articles.
1. Response surface study of inductively coupled plasma etching of GaAs/AlGaAs in BCl3/Cl2
2. Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl[sub 3] Plasma
3. Review: Back-Side via Hole Etching Process for Grounding GaAs Based Monolithic Microwave Integrated Circuits
4. On the sputtering yield of molecular ions
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