1. Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki: uch. dlya stud. vuzov po spets. elektronnoi tekhniki (Electronic Engineering Materials, The School-Book), St. Petersburg: Lan’, 2001.
2. Dunaev, A.V., Pivovarenok, S.A., Semenova, O.A., Kapinos, S.P., Efremov, A.M., and Svettsov, V.I., Kinetics and mechanisms of GaAs plasma-chemical etching in Cl2 and HCl, Fiz. Khim. Obrab. Mater., 2010, no. 6, pp. 42–46.
3. Dunaev, A.V., Pivovarenok, S.A., Efremov, A.M., and Svettsov, V.I., Spectral study of HCl plasma etching of gallium arsenide, Russ. Microelectron., 2011, vol. 40, no. 6, pp. 379–382.
4. Dunaev, A.V. and Murin, D.B., Etching of GaAs in plasma with a mixture of R-12 freon with argon (CCl2F2/Ar), Mikroelektronika, 2019, vol. 48, no. 1, pp. 38–46.
5. Koryakin, Yu.V. and Angelov, I.I., Chistye khimicheskie veshchestva (Pure Chemical Substances), Moscow: Khimiya, 1974.