A simple signal analyser for deep-level trap spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,General Materials Science,Instrumentation
Link
http://stacks.iop.org/0022-3735/10/i=10/a=019/pdf
Reference5 articles.
1. Electrical properties of platinum in silicon as determined by deep‐level transient spectroscopy
2. New Developments in Defect Studies in Semiconductors
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
5. A correlation method for semiconductor transient signal measurements
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of deep levels in n-type CdTe;Journal of Physics: Condensed Matter;1991-11-04
2. Electronic properties of defects created by 1.6 GeV argon ions in silicon;Materials Science and Engineering: B;1989-02
3. System effects in double‐channel gated‐integrator‐based deep‐level transient spectroscopy;Journal of Applied Physics;1988-12
4. DLTS investigation of electron traps in As-grown and Cd-fired CdS;Physica Status Solidi (a);1983-07-16
5. Deep level transient spectroscopy of hole traps in Zn-annealed ZnTe;Solid State Communications;1983-06
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