Characteristics of deep levels in n-type CdTe
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/3/i=44/a=008/pdf
Reference40 articles.
1. The role of the ionization of defects in causing systematic differences in the semiconductor properties of undoped compounds
2. Characterization and annealing behavior of deep levels in CdTe epitaxial layers
3. DLTS studies of deep levels in semiconducting N-CdTe single crystals
4. A DLTS study of deep levels in n‐type CdTe
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