Characterization and annealing behavior of deep levels in CdTe epitaxial layers

Author:

Sitter H.,Heinrich H.,Lischka K.,Lopez‐Otero A.‐

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation of Electrically Active Defects in n-CdS/p-CdTe Solar Cells;ECS Transactions;2011-10-04

2. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

3. Deep traps in CdTe induced by ion implantation and annealing;Journal of Physics and Chemistry of Solids;2000-11

4. Deep levels in In-doped CdTe epitaxial films grown on p-CdTe substrates;Applied Surface Science;1997-10

5. Temperature dependence of I-V and C-V characteristics of Schottky diodes;Renewable Energy;1995-07

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