The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si (111) substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/5/050/pdf
Reference26 articles.
1. Carrier–envelope phase effects for a dipolar molecule interacting with ultrashort laser pulse
2. Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111)
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3. Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires;Journal of Crystal Growth;2021-07
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