Interfacial engineering for the enhancement of interfacial thermal conductance in GaN/AlN heterostructure
Author:
Affiliation:
1. Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, Donghua University, Shanghai 201620, China
2. Institute of Artificial Intelligence, Donghua University, Shanghai 201620, China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0052742
Reference60 articles.
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5. Characterization of n-GaN / p-GaAs NP heterojunctions
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