Silicon-on-nothing MOSFETs fabricated with hydrogen and helium co-implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/15/11/049/pdf
Reference11 articles.
1. Buried Layer Engineering to Reduce the Drain-Induced Barrier Lowering of Sub-0.05 µm SOI-MOSFET
2. Silicon-on-Nothing (SON)-an innovative process for advanced CMOS
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2. Analytical Modeling and Simulation of a Triple-Material Double-Gate SON TFET with Stacked Front-Gate Oxide for Low-Power Applications;Iranian Journal of Science and Technology, Transactions of Electrical Engineering;2023-05-03
3. Characterization and thermal steadiness of trenched stepped gate SON MOSFET for future CMOS devices;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
4. 3-D Analytical Modeling of Triple Metal Tri-Gate Graded Channel High-k SON TFET for Improved Performance;Silicon;2019-12-04
5. Grooved-gate silicon-on-nothing (SON) MOSFET: evidence for suppressing SCEs;Nanomaterials and Energy;2019-12-01
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