Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride-Reference-Cited by-同舟云学术

Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride

Published:2016-09-20 Issue:3 Volume:3 Page:035029
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Park Joon Young,Lee Gil-Ho,Jo Janghyun,Cheng Austin K,Yoon Hosang,Watanabe Kenji,Taniguchi Takashi,Kim Miyoung,Kim Philip,Yi Gyu-Chul

Funder

National Research Foundation of Korea

Air Force Office of Scientific Research

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/3/035029/pdf

Reference40 articles.

1. Colloquium: Topological insulators

2. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

3. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit

4. Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological InsulatorBi2Se3

5. Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization strategies of two-dimensional (2D) materials for quantum technologies: A comprehensive review;Materials Science in Semiconductor Processing;2024-10

2. Understanding the growth mechanisms of γ-GeSe for polymorph-selective large-area deposition;Journal of Materials Chemistry C;2024

3. The Raman Spectra of Co-, Fe-, and Mn-doped Bi2Se3 Single Crystals;Crystals;2023-03-05

4. Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in-situ spectroscopic ellipsometry;Journal of Crystal Growth;2022-08

5. From classical to quantum regime of topological surface states via defect engineering;SciPost Physics Lecture Notes;2022-07-21