Abstract
Abstract
As one of two-dimensional (2D) semiconductor materials, transition metal dichalcogenides (TMDs) have sparked enormous potential in next-generation electronics due to their unique and excellent physical, electronic and optical properties. Controllable growth of wafer-scale 2D TMDs is essential to realize the various high-end applications of TMDs, while it remains challenging. Herein, 2 inch 2D WS2 films were successfully synthesized by ambient pressure chemical vapor deposition based on substrate engineering and space-confined strategies. WS2 nucleation density can be effectively modulated depending on the annealing conditions of sapphire substrate. The thickness of WS2 films can be controllably fabricated by adjusting the space-confined height. Moreover, our strategies are demonstrated to be universal for the growth of other 2D TMD semiconductors. WS2-based photodetectors with different thicknesses were systematically investigated. Monolayer WS2 photodetector displays large responsivity of 0.355 A W−1 and high specific detectivity of 1.48 × 1011 Jones. Multilayer WS2 device exhibits negative self-powered photoresponse. Our work provides a new route for the synthesis of wafer-scale 2D TMD materials, paving the way for high performance integrated optoelectronic devices.
Funder
Key Project from Department Education of Hunan Province
National Natural Science Foundation of China
Key Research and Development Program of Hunan Province
National College Students Innovation and Entrepreneurship Training Program
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
3 articles.
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