High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates-Reference-Cited by-同舟云学术

High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates

Published:2016-01-11 Issue:12 Volume:28 Page:2316-2321
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Rhyee Jong-Soo¹,Kwon Junyeon²,Dak Piyush³,Kim Jin Hee¹,Kim Seung Min⁴,Park Jozeph²,Hong Young Ki²,Song Won Geun²,Omkaram Inturu²,Alam Muhammad A.³,Kim Sunkook²

Affiliation:

1. Department of Applied Physics; Kyung Hee University; Yongin 17104 Korea

2. Multi-Functional Nano/Bio Electronics Laboratory; Kyung Hee University; Gyeonggi 17104 Korea

3. School of Electrical and Computer Engineering; Purdue University; West Lafayette IN 47907 USA

4. Carbon Convergence Materials Research Center; Korea Institute of Science and Technology; Wanju-gun 565-905 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201504789/fullpdf

Reference36 articles.

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