Nucleation and growth of WSe 2 : enabling large grain transition metal dichalcogenides-Reference-Cited by-同舟云学术

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Nucleation and growth of WSe 2 : enabling large grain transition metal dichalcogenides

Published:2017-09-22 Issue:4 Volume:4 Page:045019
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Yue Ruoyu,Nie Yifan,Walsh Lee A,Addou Rafik,Liang Chaoping^ORCID,Lu Ning,Barton Adam T,Zhu Hui,Che Zifan,Barrera Diego,Cheng Lanxia,Cha Pil-Ryung,Chabal Yves J,Hsu Julia W P,Kim Jiyoung,Kim Moon J,Colombo Luigi,Wallace Robert M,Cho Kyeongjae,Hinkle Christopher L

Funder

Texas Higher Education Coordinating Board

National Science Foundation

National Institute of Standards and Technology

Defense Advanced Research Projects Agency

Microelectronics Advanced Research Corporation

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa8ab5/pdf

Reference69 articles.

1. van der Waals epitaxial growth and characterization of MoSe2thin films on SnS2

2. Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization

3. Surface resonances at transition metal dichalcogenide heterostructures

4. HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

5. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

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