Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization-Reference-Cited by-同舟云学术

Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization

Published:1995-05 Issue:3 Volume:13 Page:1761-1767
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Schlaf R.,Louder D.,Lang O.,Pettenkofer C.,Jaegermann W.,Nebesny K. W.,Lee P. A.,Parkinson B. A.,Armstrong N. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579766

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