Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy-Reference-Cited by-同舟云学术

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Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy

Published:2017-11-06 Issue:1 Volume:5 Page:015016
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Mueller Niclas S^ORCID,Heeg Sebastian^ORCID,Alvarez Miriam Peña,Kusch Patryk,Wasserroth Sören,Clark Nick,Schedin Fredrik,Parthenios John,Papagelis Konstantinos,Galiotis Costas,Kalbáč Martin^ORCID,Vijayaraghavan Aravind,Huebner Uwe,Gorbachev Roman,Frank Otakar,Reich Stephanie^ORCID

Funder

Graphene FET Flagship

European Research Council

Engineering and Physical Sciences Research Council

H2020 European Research Council

MSMT ERC-CZ

Grantová Agentura České Republiky

Deutsche Telekom Stiftung

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa90b3/pdf

Reference66 articles.

1. The rise of graphene

2. A roadmap for graphene

3. Atomic Structure of Graphene on SiO2

4. Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

5. Raman spectroscopy as probe of nanometre-scale strain variations in graphene

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