Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices-Reference-Cited by-同舟云学术

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Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

Published:2014-10-30 Issue:4 Volume:4 Page:
ISSN:2160-3308
Container-title:Physical Review X
language:en
Short-container-title:Phys. Rev. X

Author:

Couto Nuno J. G.,Costanzo Davide,Engels Stephan,Ki Dong-Keun,Watanabe Kenji,Taniguchi Takashi,Stampfer Christoph,Guinea Francisco,Morpurgo Alberto F.

Funder

Swiss National Science Foundation

Ministerio de Economía y Competitividad

European Research Council

Deutsche Forschungsgemeinschaft

National Center of Competence in Research on Quantum Science and Technology

European Union

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevX.4.041019/fulltext

Reference49 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

3. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

4. One-Dimensional Electrical Contact to a Two-Dimensional Material

5. Multicomponent fractional quantum Hall effect in graphene

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