Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor-Reference-Cited by-同舟云学术

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Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor

Published:2016-02-18 Issue:1 Volume:3 Page:015008
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Chakraborty Biswanath,Gupta Satyendra Nath,Singh Anjali,Kuiri Manabendra,Kumar Chandan,Muthu D V S,Das Anindya,Waghmare U V,Sood A K

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/1/015008/pdf

Reference45 articles.

1. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

2. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

3. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

4. Highly anisotropic and robust excitons in monolayer black phosphorus

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3. Role of Channel Inversion in Ambient Degradation of Phosphorene FETs;IEEE Transactions on Electron Devices;2022-06

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