Doping controlled Fano resonance in bilayer 1T′-ReS2: Raman experiments and first-principles theoretical analysis-Reference-Cited by-同舟云学术

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Doping controlled Fano resonance in bilayer 1T′-ReS2: Raman experiments and first-principles theoretical analysis

Published:2021 Issue:2 Volume:13 Page:1248-1256
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Das Subhadip¹²³⁴^ORCID,Prasad Suchitra⁵⁶⁷⁴,Chakraborty Biswanath¹²³⁴,Jariwala Bhakti⁸⁹¹⁰⁴,Shradha Sai⁸⁹¹⁰⁴,Muthu D. V. S.¹²³⁴,Bhattacharya Arnab⁸⁹¹⁰⁴^ORCID,Waghmare U. V.⁵⁶⁷⁴,Sood A. K.¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Indian Institute of Science

3. Bangalore 560012

4. India

5. Theoretical Sciences Unit

6. Jawaharlal Nehru Centre for Advanced Scientific Research

7. Bangalore 560064

8. Department of Condensed Matter Physics and Materials Science

9. Tata Institute of Fundamental Research

10. Mumbai 400005

Abstract

Fano resonance with electron doping for the in-plane Raman mode near 151 cm⁻¹ in ReS₂.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR06583H

Reference57 articles.

1. The crystal structure of some rhenium and technetium dichalcogenides

2. The dichalcogenides of technetium and rhenium

3. Optical properties of the layered transition‐metal‐dichalcogenide ReS2: Anisotropy in the van der Waals plane

4. Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

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