HfO 2 on UV–O 3 exposed transition metal dichalcogenides: interfacial reactions study-Reference-Cited by-同舟云学术

HfO 2 on UV–O 3 exposed transition metal dichalcogenides: interfacial reactions study

Published:2015-01-13 Issue:1 Volume:2 Page:014004
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Azcatl Angelica,KC Santosh,Peng Xin,Lu Ning,McDonnell Stephen,Qin Xiaoye,de Dios Francis,Addou Rafik,Kim Jiyoung,Kim Moon J,Cho Kyeongjae,Wallace Robert M

Funder

National Institute of Standards and Technology

Defense Advanced Research Projects Agency

Semiconductor Research Corporation - NRI

Semiconductor Research Corporation - STARnet

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/2/1/014004/pdf

Reference53 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

3. Tunneling Transistors Based on Graphene and 2-D Crystals

4. Few-Layer MoS2: A Promising Layered Semiconductor

5. Defect-Dominated Doping and Contact Resistance in MoS2

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