Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal–insulator–semiconductor) Schottky diodes usingI–Vcharacteristics in a wide temperature range-Reference-Cited by-同舟云学术

Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal–insulator–semiconductor) Schottky diodes usingI–Vcharacteristics in a wide temperature range

Published:2012-08-24 Issue:3 Volume:86 Page:035802
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Pür F Z,Tataroğlu A

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Reference46 articles.

1. Evidence for the double distribution of barrier heights in Schottky diodes fromI-V-Tmeasurements

2. Electron transport of inhomogeneous Schottky barriers: A numerical study

3. Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes

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