Effects of Rapid Thermal Annealing on Deep Levels inn-GaInP
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/2004/i=T114/a=001/pdf
Reference16 articles.
1. Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy
2. Influence of deep level impurities on modulation response of InGaP light emitting diodes
3. Performance of GaxIn1−xP/GaAs heterojunctions grown by metal‐organic molecular‐beam epitaxy and metal‐organic vapor‐phase epitaxy
4. Defects in epitaxial Si‐doped GaInP
5. Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures
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