Novel semiconductor materials and structures produced by MBE and MOCVD
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1991/i=T35/a=049/pdf
Reference33 articles.
1. Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxy
2. Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE
3. New and unified model for Schottky barrier and III–V insulator interface states formation
4. Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfaces
5. Mechanism of Fermi-level stabilization in semiconductors
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