Analytical procedure for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy
Author:
Publisher
IOP Publishing
Subject
Applied Mathematics,Instrumentation,Engineering (miscellaneous)
Link
http://stacks.iop.org/0957-0233/25/i=4/a=044021/pdf
Reference14 articles.
1. Comparison of two-dimensional carrier profiles in metal–oxide– semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling
2. Towards reproducible scanning capacitance microscope image interpretation
3. Statistical Method for the Estimation of Carrier Concentration in Semiconductor Devices Using Scanning Capacitance Microscopy
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