WITHDRAWN: Visualization of gate-bias dependent carrier distribution in SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy-Reference-Cited by-同舟云学术

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WITHDRAWN: Visualization of gate-bias dependent carrier distribution in SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy

Published:2015-08 Issue: Volume: Page:
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chinone Norimichi,Cho Yasuo

Funder

Japan Society for the Promotion of Science (JSPS) for Young Scientists

Grant-in-Aid for Scientific Research S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Current SiC technology for power electronic devices beyond Si

2. Scanning nonlinear dielectric microscope

3. Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy

4. Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal–oxide–semiconductor field-effect transistor

5. Analytical procedure for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy

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