Optical and electrical properties of InGaZnON thin films*

Abstract

The substrate temperature (T s) and N2 partial pressure (P N2) dependent optical and electrical properties of sputtered InGaZnON thin films are studied. With the increased T s and P N2, the thin film becomes more crystallized and nitrified. The Hall mobility, free carrier concentration (N e), and electrical conductivity increase with the lowered interfacial potential barrier during crystal growing. The photoluminescence (PL) intensity decreases with the increased N e. The band gap (E g) narrows and the linear refractive index (n 1) increases with the increasing concentration of N in the thin films. The Stokes shift between the PL peak and absorption edge decreases with E g. The n 1, dispersion energy, average oscillator wavelength, and oscillator length strength all increase with n 1. The single oscillator energy decreases with n 1. The nonlinear refractive index and third order optical susceptibility increase with n 1. The Seebeck coefficient, electron effective mass, mean free path, scattering time, and plasma energy are all N e dependent.