Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=8/a=086803/pdf
Reference21 articles.
1. Enhanced Light Extraction in GaInN Light-Emitting Diode With Pyramid Reflector
2. Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
3. Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers
4. Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN
5. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape
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1. Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects;Applied Physics Letters;2024-07-15
2. Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface;Materials Science in Semiconductor Processing;2022-08
3. Nanoparticle-based microstructures for light extraction enhancement in nitride-based LEDs;Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII;2018-02-14
4. Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits;IEEE Electron Device Letters;2014-04
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