Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference24 articles.
1. Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes
2. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
3. AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
4. Growth of blue GaN LED structures on 150-mm Si(111)
5. Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
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1. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer;Chinese Physics B;2022-01-01
2. Crack-free Si-doped n-AlGaN film grown on sapphire substrate with high-temperature AlN interlayer;Optik;2015-12
3. First-principles calculation of doped GaN/AlN superlattices;Acta Physica Sinica;2015
4. Polarization properties of wurtzite structure Zn1-xMgxO and band offset at Zn0.75Mg0.25O/ZnO interfaces: A GGA+U investigation;Acta Physica Sinica;2015
5. GaN hexagonal pyramids formed by a photo-assisted chemical etching method;Chinese Physics B;2014-05
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