Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/10/108503/pdf
Reference23 articles.
1. Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations
2. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs]
3. A consistent physical framework for N and P BTI in HKMG MOSFETs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices;Chinese Physics B;2022-01-01
2. An Automated Setup for the Characterization of Time-Based Degradation Effects Including the Process Variability in 40-nm CMOS Transistors;IEEE Transactions on Instrumentation and Measurement;2021
3. Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method;Informacije MIDEM - Journal of Microelectronics, Electronic Components and Materials;2020-11-20
4. Modeling of NBTS Effects in P-Channel Power VDMOSFETs;IEEE Transactions on Device and Materials Reliability;2020-03
5. Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission;Journal of Electronic Testing;2018-09-19
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