Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission-Reference-Cited by-同舟云学术

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Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission

Published:2018-09-19 Issue:5 Volume:34 Page:599-605
ISSN:0923-8174
Container-title:Journal of Electronic Testing
language:en
Short-container-title:J Electron Test

Author:

Qing J.,Zeng Y.,Li X. J.^ORCID,Zhang P. J.,Sun Y. B.,Shi Y. L.

Funder

National Science and Technology Major Project

National Natural Science Foundation of China

Shanghai Sailing Program

Science and Technology Commission of Shanghai Municipality

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

http://link.springer.com/article/10.1007/s10836-018-5751-8/fulltext.html

Reference17 articles.

1. Cao YR, Ma XH, Hao Y, Hu SG (2010) Effect of channel length and width on NBTI in ultra deep sub-micron PMOSFETS. Chin Phys Lett 27(3):1–18. https://doi.org/10.1088/0256-307X/27/3/037301

2. Goel N, Mahapatra S (2016) Modeling of DC and AC NBTI degradation and recovery for SiON and HKMG MOSFETs, Fundamentals of Bias Temperature Instability in MOS Transistors, Springer India, pp 209–263

3. Goel N, Joshi K, Mukhopadhyay S, Nanaware N, Mahapatra S (2014) A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs. Microelectron Reliab 54(3):491–519. https://doi.org/10.1016/j.microrel.2013.12.017

4. Goel N, Naphade T, Mahapatra S (2015) Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress, in Proc. IEEE International Reliability Physics Symposium Proceedings, pp 4A.3.1-4A.3.7. https://doi.org/10.1109/IRPS.2015.7112725

5. Grasser T (2012) Stochastic charge trapping in oxides: from random telegraph noise to bias temperature instabilities. Microelectron Reliab 52(1):39–70. https://doi.org/10.1016/j.microrel.2011.09.002

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