Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs
Author:
Publisher
Springer India
Link
http://link.springer.com/content/pdf/10.1007/978-81-322-2508-9_6
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process;Chinese Physics B;2023-12-01
2. BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps;Recent Advances in PMOS Negative Bias Temperature Instability;2021-11-26
3. Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence;IEEE Transactions on Device and Materials Reliability;2020-03
4. Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission;Journal of Electronic Testing;2018-09-19
5. Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs—Part-II: AC Stress and Recovery;IEEE Transactions on Electron Devices;2018-05
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